| File information: | |
| File name: | irlf120.pdf [preview irlf120] |
| Size: | 548 kB |
| Extension: | |
| Mfg: | International Rectifier |
| Model: | irlf120 🔎 |
| Original: | irlf120 🔎 |
| Descr: | . Electronic Components Datasheets Active components Transistors International Rectifier irlf120.pdf |
| Group: | Electronics > Components > Transistors |
| Uploaded: | 27-09-2021 |
| User: | Anonymous |
| Multipart: | No multipart |
| Information about the files in archive: | ||
| Decompress result: | OK | |
| Extracted files: | 1 | |
File name irlf120.pdf PD - 90639A REPETITIVE AVALANCHE AND dv/dt RATED IRLF120 HEXFET TRANSISTORS 100V, N-CHANNEL THRU-HOLE (TO-39) Product Summary Part Number BVDSS RDS(on) ID IRLF120 100V 0.35 5.3A The Logic Level `L' series of power MOSFETs are de- signed to be operated with level logic gate-to-source voltage of 5V. In addition to the well established characterstics of HEXFETs , they have the added ad- TO-39 vantage of providing low drive requirements to inter- face power loads to logic level IC's and microprocessors. Fields of applications include: high speed power appli- Features: cations such as switching regulators, switching con- n Repetitive Avalanche Ratings verters, motor drivers, solenoid and relay drivers and n Dynamic dv/dt Rating drivers for high power bipolar switching transistors re- n Low Drive Requirements quiring high speed and low gatedrive voltage. n Execellent Temperature Stability The HEXFET technology is the key to International n Fast Switching Speeds Rectifier's advanced line of logic level power MOSFET n Ease of Paralleling transistors. The efficient geometry and unique process- n Hermetically Sealed ing of the HEXFET achieve very low on-state resistance n Light Weight combined with high transconductance and great de- vice ruggedness. . Absolute Maximum Ratings Parameter Units ID @ VGS = 5.0V, TC = 25 | ||

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